14,453 research outputs found

    Valley contrasting physics in graphene: magnetic moment and topological transport

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    We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the so-called valley-tronics applications

    Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

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    Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.Comment: published version (7 pages, 6 figures

    Tunable Intrinsic Plasmons due to Band Inversion in Topological Materials

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    The band inversion has led to rich physical effects in both topological insulators and topological semimetals. It has been found that the inverted band structure with the Mexican-hat dispersion could enhance the interband correlation leading to a strong intrinsic plasmon excitation. Its frequency ranges from several meV\mathrm{meV} to tens of meV\mathrm{meV} and can be effectively tuned by the external fields. The electron-hole asymmetric term splits the peak of the plasmon excitation into double peaks. The fate and properties of this plasmon excitation can also act as a probe to characterize the topological phases even in the lightly doped systems. We numerically demonstrate the impact of the band inversion on plasmon excitations in magnetically doped thin films of three-dimensional strong topological insulators, V- or Cr-doped (Bi, Sb)2_2Te3_3, which support the quantum anomalous Hall states. Our work thus sheds some new light on the potential applications of topological materials in plasmonics.Comment: 6 pages, 5 figures, Accepted in PR

    Berry phase modification to the energy spectrum of excitons

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    By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the k\bm k-space area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a model, we show that this splitting can be understood as an effective spin-orbit coupling effect. In addition, there is also an energy shift caused by other "relativistic" terms. Our result reveals the limitation of the venerable hydrogenic model of excitons, and highlights the importance of the Berry curvature in the effective mass approximation.Comment: 4.5 pages, 2 figures, reference updated and minor change

    Forced Oscillation Source Location via Multivariate Time Series Classification

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    Precisely locating low-frequency oscillation sources is the prerequisite of suppressing sustained oscillation, which is an essential guarantee for the secure and stable operation of power grids. Using synchrophasor measurements, a machine learning method is proposed to locate the source of forced oscillation in power systems. Rotor angle and active power of each power plant are utilized to construct multivariate time series (MTS). Applying Mahalanobis distance metric and dynamic time warping, the distance between MTS with different phases or lengths can be appropriately measured. The obtained distance metric, representing characteristics during the transient phase of forced oscillation under different disturbance sources, is used for offline classifier training and online matching to locate the disturbance source. Simulation results using the four-machine two-area system and IEEE 39-bus system indicate that the proposed location method can identify the power system forced oscillation source online with high accuracy.Comment: 5 pages, 3 figures. Accepted by 2018 IEEE/PES Transmission and Distribution Conferenc

    Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions

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    We study the quantum diffusive transport of multivalley massive Dirac cones, where time-reversal symmetry requires opposite spin orientations in inequivalent valleys. We show that the intervalley scattering and intravalley scattering can be distinguished from the quantum conductivity that corrects the semiclassical Drude conductivity, due to their distinct symmetries and localization trends. In immediate practice, it allows transport measurements to estimate the intervalley scattering rate in hole-doped monolayers of group-VI transition metal dichalcogenides (e.g., molybdenum dichalcogenides and tungsten dichalcogenides), an ideal class of materials for valleytronics applications. The results can be generalized to a large class of multivalley massive Dirac systems with spin-valley coupling and time-reversal symmetry.Comment: 5 pages+4 pages of supplemental materials, 4 figure
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